FDLL4150 — Small Signal Diode
? 1997 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FDLL4150 Rev. 1.1.0 1
April 2013
FDLL4150
Small Signal Diode
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA
= 25°C unless otherwise noted.
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
These ratings are based on a maximum junction temperature of 200 °C.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol Parameter Value Units
WIV
Working Inverse Voltage 50 V
IO
Average Rectified Forward Current 200 mA
IF
DC Forward Current 400 mA
iF
Recurrent Peak Forward Current 600 mA
IFSM
Non-repetitive Peak Forward Current
Pulse Width = 1.0 s 1.0 A
Pulse Width = 1.0 μs4.0A
TSTG
Storage Temperature Range -65 to +200
°C
TJ
Operating Junction Temperature 175
°C
Symbol Parameter
Max.
Units
1N / FDLL 4150
PD
Power Dissipation 500 mW
Derate above 25°C3.33mW/°C
RθJA
Thermal Resistance, Junction to Ambient 300
°C/W
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
LL-34 COLOR BAND MARKING
DEVICE
1ST BAND
FDLL4150 BLACK
-1st band denotes cathode terminal
and has wider width
SOD80
Cathode Band
相关PDF资料
FDLL4151 DIODE HI CONDUCTANCE 75V LL-34
FDLL4448_D87Z DIODE SMALL SIGNAL 100V LL-34
FDLL457A DIODE HI CONDUCTANCE 70V LL-34
FDLL485B DIODE 180V 200MA LL34
FDLL914 DIODE SGL JUNCT 100V 4.0NS LL34
FESB8ATHE3/81 DIODE 8A 50V 35NS SGL TO263AB
FFA40UP35STU DIODE ULT FAST 40A 350V TO-3P
FFB20UP20STM DIODE ULTRA FAST 200V D2PAK
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